SI1029X Vishay Siliconix, SI1029X Datasheet - Page 5

• Manufacturer Part Number: SI1029X
• Description: Complementary N- and P-Channel 60-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71435
S-03518—Rev. A, 11-Apr-01
1.0
0.8
0.6
0.4
0.2
0.0
15
12
20
16
12
9
6
3
0
8
4
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
0.3
= 500 mA
200
1
V
DS
Q
Output Characteristics
g
I
D
– Drain-to-Source Voltage (V)
0.6
– Total Gate Charge (nC)
V
8 V
– Drain Current (mA)
GS
V
Gate Charge
400
GS
2
V
= 4.5 V
DS
V
= 5 V
GS
0.9
= 30 V
= 10 V
600
3
V
GS
1.2
= 10 V
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
_
New Product
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
0
8
0
–50
0
0
On-Resistance vs. Junction Temperature
–25
V
V
GS
2
V
5
GS
T
GS
V
Transfer Characteristics
J
DS
0
= 10 V @ 500 mA
– Gate-to-Source Voltage (V)
= 0 V
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
25
Capacitance
10
4
Vishay Siliconix
T
J
50
= –55_C
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V @ 25 mA
Si1029X
100
125_C
www.vishay.com
20
8
25_C
125
150
10
25
5