SUD50N04-37P Vishay, SUD50N04-37P Datasheet - Page 4

• Manufacturer Part Number: SUD50N04-37P
• Description: N-Channel 40-V (D-S) MOSFET
• Manufacturer: Vishay

SUD50N04-37P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
100
0.4
0.2
0.0
0.1
80
60
40
20
10
0
0
1
- 50
0.0
0 .
0
01
I
D
= 5 mA
- 25
Source-Drain Diode Forward Voltage
Single Pulse Power, Junction-to-Case
0.2
V
0.001
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
I
T
D
0.4
J
= 250 µA
- Temperature (°C)
25
T
J
= 150 °C
Time (s)
0.01
0.6
50
75
0.8
100
0.1
T
J
= 25 °C
1.0
125
New Product
150
1.2
1
0.20
0.16
0.12
0.08
0.04
0.01
100
100
0.1
80
60
40
20
10
0
0
0.0001
0.01
1
0
On-Resistance vs. Gate-to-Source Voltage
Limited by r
Safe Operating Area, Junction-to-Ambient
Single Pulse Power, Junction-to-Ambient
* V
GS
0.001
> minimum V
V
2
V
Single Pulse
GS
0.1
T
DS
A
DS(on)
- Gate-to-Source Voltage (V)
= 25 °C
- Drain-to-Source Voltage (V)
*
0.01
4
GS
Time (s)
1
at which r
S-80109-Rev. B, 21-Jan-08
Document Number: 69732
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0.1
6
DS(on)
10
T
T
I
A
D
is specified
A
= 125 °C
1
= 5 A
= 25 °C
8
100 µs
1 ms
10 ms
100 ms
10 s
DC
100
10
10