IRL3202 International Rectifier, IRL3202 Datasheet - Page 2

• Manufacturer Part Number: IRL3202
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

IRL3202
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
R
L
V
DV
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
I
S
DSS
on
SM
GSS
d(on)
r
d(off)
f
rr
D
S
DS(on)
fs
(BR)DSS
GS(th)
g
gd
iss
oss
rss
SD
gs
rr
Repetitive rating; pulse width limited by
R
max. junction temperature.
(BR)DSS
Starting T
G
= 25W , I
/DT
J
J
AS
Static Drain-to-Source On-Resistance
Internal Drain Inductance
= 25°C, L = 0.64mH
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Leakage Current
Internal Source Inductance
= 29A.
Parameter
Parameter
J
= 25°C (unless otherwise specified)
T
I
Pulse width £ 300µs; duty cycle £ 2%.
0.70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
SD
–––
–––
–––
–––
–––
–––
20
28
–––
J
£ 150°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
£ 29A, di/dt £ 63A/µs, V
0.029 –––
2000 –––
4.5
–––
––– 0.019
––– 0.016
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
100
800
290
–––
–––
–––
130
7.5
9.8
63
82
68
–––
–––
190
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
100
1.3
190
25
43
12
13
48
V/°C
µA
nA
nC
nC
ns
nH
pF
ns
V
V
V
W
S
A
V
V
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
V
V
V
integral reverse
DD
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 29A
= 29A
= 25°C, I
= 25°C, I
£ V
= 0.3W ,
= 9.5W , V
= V
= 16V, I
= 20V, V
= 10V, V
= 0V, I
= 4.5V, I
= 7.0V, I
= 10V
= 16V
= 4.5V, See Fig. 6
= 0V
= 15V
= -10V
= 10V
(BR)DSS
GS
, I
D
F
S
D
D
GS
= 29A
= 250µA
D
D
GS
= 29A, V
Conditions
GS
,
Conditions
= 250µA
= 29A
= 29A
= 29A
= 4.5V
= 0V, T
= 0V
D
GS
= 1mA
J
= 0V
= 150°C
G
G
S
+L
D
D
S
)
S
D