SI4955DY Vishay Siliconix, SI4955DY Datasheet - Page 2
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SI4955DY
Manufacturer Part Number
SI4955DY
Description
Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
Manufacturer
Vishay Siliconix
Datasheet
1.SI4955DY.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4955DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 973
Part Number:
SI4955DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
www.vishay.com
2
Si4955DY
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Forward Transconductance
Diode Forward Voltage
Diode Forward Voltage
Dynamic
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate-Source Charge
Gate Drain Charge
Gate-Drain Charge
Turn On Delay Time
Turn-On Delay Time
Rise Time
Rise Time
Turn Off Delay Time
Turn-Off Delay Time
Fall Time
Fall Time
Source-Drain
Source-Drain
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
I
I
DS(on)
DS(on)
t
t
I
I
t
t
I
I
GS(th)
GS(th)
D(
D(on)
V
V
Q
Q
Q
Q
d( ff)
d(off)
d(
d(on)
GSS
GSS
DSS
DSS
g
g
Q
Q
t
t
SD
SD
t
t
t
t
rr
f
fs
gs
gd
r
f
f
g
g
d
)
)
V
V
V
DS
I
I
I
V
V
D
D
DS
D
DS
DS
^ −1 A, V
^ 1 A, V
^ −1 A, V
= −15 V, V
New Product
= −10 V, V
I
I
F
F
V
V
= −24 V, V
= −16 V, V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= −1.7 A, di/dt = 100 A/ms
= −1.7 A, di/dt = 100 A/ms
DS
DS
V
GS
GS
GS
I
I
DS
DS
DD
DD
DS
GS
DS
10 V V
S
S
DS
DS
DD
DS
GS
DS
= −1.7 A, V
= −1.7 A, V
w −5 V, V
p −5 V, V
= −4.5 V, I
= −4.5 V, I
= −2.5 V, I
= V
= V
= 0 V, V
= −15 V, R
= −15 V, R
= −10 V, I
= −15 V, I
= 0 V, V
= −24 V, V
= −16 V, V
= −10 V, R
= −1.8 V, I
= −15 V, I
GEN
GEN
Channel-1
Channel-1
Channel-2
Channel-1
Channel-2
GEN
Test Condition
GS
GS
GS
10 V R
GS
GS
GS
, I
, I
= −10 V, I
= −4.5 V, R
= 4.5 V, R
= −10 V, R
GS
= −4.5 V, I
D
D
GS
= 0 V, T
= 0 V, T
GS
GS
D
D
= −250 mA
= −250 mA
D
D
D
GS
GS
D
L
L
GS
GS
D
4 5 V I
L
= "20 V
= −5.0 A
= −5.0 A
= "8 V
= −7.0 A
= −3.7 A
= −6.2 A
= −15 W
= −15 W
= −3 A
= 10 W
= −10 V
= −10 V
= −3 A
= 0 V
= 0 V
= 0 V
= 0 V
10 W
J
J
D
G
= 85_C
= 85_C
D
G
G
= −5.0 A
= −7 A
= 6 W
= 6 W
= 6 W
7 A
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Min
−1.0
−0.4
−20
−20
S-32411—Rev. B, 24-Nov-03
0.044
0.022
0.082
0.029
0.039
−0.80
−0.80
Typ
12.5
125
2.1
2.6
3.5
6.0
10
25
21
20
10
40
30
22
85
25
64
Document Number: 72241
7
"100
"100
Max
0.054
0.027
0.100
0.035
0.048
−1.2
−1.2
190
130
−3
−1
−1
−1
−5
−5
19
25
15
30
15
60
45
35
60
90
Unit
nA
nA
mA
mA
nC
nC
ns
ns
W
V
V
A
A
S
S
V
V