SI4953ADY Vishay Siliconix, SI4953ADY Datasheet - Page 2

• Manufacturer Part Number: SI4953ADY
• Description: Dual P-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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SPICE Device Model Si4953ADY
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
GS(th)
D(on)
d(on)
d(off)
g
Q
t
t
t
SD
rr
fs
gd
r
gs
f
g
V
DS
I
D
= −15 V, V
≅ −1 A, V
I
F
V
V
V
V
V
= −1.7 A, di/dt = 100 A/µs
V
GS
I
DS
GS
DS
DS
Test Condition
S
DD
= −1.7 A, V
= −4.5 V, I
= −5 V, V
= −10 V, I
= −10 V, I
= V
= −15 V, R
GEN
GS
GS
, I
= −10 V, I
= −10V, R
D
= −250 µA
GS
D
D
D
GS
L
= −4.9 A
= −4.9 A
= −3.7 A
= −10 V
= 15 Ω
= 0 V
D
G
= −4.9 A
= 6 Ω
Simulated
Data
0.046
0.072
−0.80
2.1
93
15
12
16
20
30
33
9
4
2
Measured
S-60073Rev. B, 23-Jan-06
Data
0.045
0.075
−0.80
Document Number: 70648
15
10
40
20
30
9
4
2
7
Unit
nC
ns
V
A
Ω
S
V
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