SI4944DY Vishay Siliconix, SI4944DY Datasheet

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SI4944DY

Manufacturer Part Number
SI4944DY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
Ordering Information: Si4944DY
ti
G
G
S
S
1
1
2
2
t A bi
1
2
3
4
J
J
a
a
0.0095 @ V
0.016 @ V
Top View
= 150_C)
= 150_C)
t
a
a
SO-8
Parameter
Parameter
r
DS(on)
Dual N-Channel 30-V (D-S) MOSFET
Si4944DY-T1 (with Tape and Reel)
a
a
GS
GS
(W)
= 4.5 V
= 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 85_C
= 25_C
= 85_C
D
12.2
9.4
(A)
Symbol
Symbol
T
G
R
R
R
V
J
V
I
1
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 100% R
APPLICATIONS
D DC/DC Conversion
D Load Switching
D
S
1
1
10 secs
Typical
12.2
8.8
1.9
2.3
1.2
42
75
19
g
Tested
−55 to 150
G
"20
30
30
2
Steady State
N-Channel MOSFET
Maximum
Vishay Siliconix
9.3
6.7
1.1
1.3
0.7
55
95
25
D
S
2
2
Si4944DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI4944DY Summary of contents

Page 1

... Top View Ordering Information: Si4944DY Si4944DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4944DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 72512 S-32131—Rev. A, 27-Oct-03 New Product 25_C J 1.0 1.2 1.4 Si4944DY Vishay Siliconix Capacitance 2400 C iss 1800 1200 600 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4944DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72512 S-32131—Rev. A, 27-Oct-03 New Product −2 − Square Wave Pulse Duration (sec) Si4944DY Vishay Siliconix 1 10 www.vishay.com 5 ...

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