SI4914DY Vishay Siliconix, SI4914DY Datasheet - Page 7

• Manufacturer Part Number: SI4914DY
• Description: Dual N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
0.001
0.01
100
0.1
40
10
10
1
1
0.0
0
Reverse Current vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.2
25
V
SD
T
0.4
J
– Source-to-Drain Voltage (V)
= 150 °C
50
T
J
– Temperature (°C)
0.6
75
0.8
100
T
0.01
J
1.0
100
0.1
= 25 °C
10
1
0.1
125
r
1.2
DS(on)
Limited
I
D(on)
Single Pulse
T
C
Limited
V
= 25 °C
1.4
150
DS
Safe Operating Area
– Drain-to-Source Voltage (V)
1
BV
DSS
Limited
10
0.10
0.08
0.06
0.04
0.02
0.00
200
160
120
80
40
0
0.001
0
I
DM
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
2
V
0.01
100
GS
– Gate-to-Source Voltage (V)
Time (sec)
4
0.1
Vishay Siliconix
6
Si4914DY
I
D
www.vishay.com
= 7.4 A
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