SI4866BDY Vishay Siliconix, SI4866BDY Datasheet - Page 3

• Manufacturer Part Number: SI4866BDY
• Description: N-Channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
0.0065
0.0060
0.0055
0.0050
0.0045
0.0040
4.5
3.6
2.7
1.8
0.9
0.0
50
40
30
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
0.0
0
0
I
D
= 10 A
10
11
0.5
V
DS
Output Characteristics
Q
g
V
- Drain-to-Source Voltage (V)
V
V
- Total Gate Charge (nC)
I
DS
D
GS
GS
Gate Charge
- Drain Current (A)
20
= 6 V
22
1.0
= 1.8 V
= 2.5 V
V
DS
V
= 4 V
GS
= 4.5 V
30
33
1.5
V
DS
1 V
1.5 V
= 8 V
40
44
2.0
50
55
2.5
7000
5600
4200
2800
1400
2.0
1.6
1.2
0.8
0.4
0.0
1.5
1.3
1.1
0.9
0.7
0
0.0
- 50
0
I
D
On-Resistance vs. Junction Temperature
= 12 A
- 25
2
0.3
V
V
C
GS
Transfer Characteristics
DS
T
rss
0
J
T
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
C
4
= 125 °C
25
0.6
Capacitance
V
C
GS
iss
25 °C
= 1.8 V
50
6
Vishay Siliconix
C
0.9
oss
Si4866BDY
75
8
100
www.vishay.com
- 55 °C
V
1.2
GS
10
= 4.5 V
125
1.5
150
12
3
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