SI4834BDY Vishay Siliconix, SI4834BDY Datasheet

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SI4834BDY

Manufacturer Part Number
SI4834BDY
Description
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Manufacturer
Vishay Siliconix
Datasheet

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SI4834BDY-T1
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Notes
a.
Document Number: 72064
S-31062—Rev. B, 26-May-03
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
V
i
V
Ordering Information: Si4834BDY
DS
DS
30
30
30
(V)
J
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
(V)
ti
G
G
S
S
1
1
2
2
t A bi
1
2
3
4
Diode Forward Voltage
Parameter
Parameter
J
J
a
a
Si4834BDY-T1 (with Tape and Reel)
= 150_C)
= 150_C)
t
a
a
0.030 @ V
0.022 @ V
Top View
0.50 V @ 1.0 A
SO-8
r
V
DS(on)
SD
a
a
(v)
GS
GS
(W)
= 4.5 V
= 10 V
8
7
6
5
a
Steady-State
Steady-State
t v 10 sec
T
T
T
T
D
D
D
D
A
A
A
A
1
1
2
2
= 25_C
= 70_C
= 25_C
= 70_C
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Symbol
I
I
D
F
T
7.5
6.5
R
R
R
2.0
V
J
V
(A)
I
(A)
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
G
1
N-Channel MOSFET
Typ
52
93
35
MOSFET
10 secs
S
D
1
1
7.5
6.0
1.7
2.0
1.3
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
APPLICATIONS
D Symmetrical Buck-Boost DC/DC Converter
Max
62.5
110
Schottky Diode
40
- 55 to 150
"20
30
30
Typ
53
93
35
Steady State
Schottky
Vishay Siliconix
G
2
5.7
4.6
0.9
1.1
0.7
N-Channel MOSFET
Si4834BDY
Max
62.5
110
40
S
D
2
2
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI4834BDY Summary of contents

Page 1

... Top View Ordering Information: Si4834BDY Si4834BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4834BDY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b b Diode Forward Voltage Diode Forward Voltage ...

Page 3

... Q - Total Gate Charge (nC) g Document Number: 72064 S-31062—Rev. B, 26-May- 1200 960 720 480 240 Si4834BDY Vishay Siliconix Transfer Characteristics 125_C C 5 25_C - 55_C Gate-to-Source Voltage (V) GS ...

Page 4

... Si4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.2 = 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J www.vishay.com 25_C J 0.8 1.0 1.2 100 125 150 Safe Operating Area, Junction-to-Foot 1000 ...

Page 5

... Single Pulse 0. Document Number: 72064 S-31062—Rev. B, 26-May- Square Wave Pulse Duration (sec Square Wave Pulse Duration (sec) Si4834BDY Vishay Siliconix MOSFET Notes Duty Cycle Per Unit Base = R = 93_C/W thJA (t) 3 ...

Page 6

... Si4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 0 0.01 0.001 0.0001 Temperature (_C) J Capacitance 200 160 120 80 C oss Drain-to-Source Voltage (V) DS www.vishay.com 6 100 125 150 SCHOTTKY Forward Voltage Drop ...

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