SI4500BDY Vishay Siliconix, SI4500BDY Datasheet - Page 6

• Manufacturer Part Number: SI4500BDY
• Description: Complementary MOSFET Half-Bridge (N- and P-Channel)
• Manufacturer: Vishay Siliconix

Si4500BDY
Vishay Siliconix
www.vishay.com
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
GS
V
I
D
DS
Source-Drain Diode Forward Voltage
1
= 5.3 A
= 2.5 V
On-Resistance vs. Drain Current
= 10 V
0.3
4
V
SD
T
2
Q
J
g
= 150_C
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
3
Gate Charge
0.6
8
4
0.9
12
5
T
J
= 25_C
V
GS
6
1.2
= 4.5 V
16
7
1.5
20
8
0.20
0.16
0.12
0.08
0.04
0.00
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
−25
D
GS
= 5.3 A
I
D
= 4.5 V
= 1 A
1
4
T
V
V
0
J
DS
GS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
C
25
Capacitance
oss
2
8
50
C
I
S-41428—Rev. B, 26-Jul-04
12
D
3
iss
Document Number: 72281
75
= 5.3 A
P-CHANNEL
100
16
4
125
150
20
5