SI4435BDY Vishay Siliconix, SI4435BDY Datasheet
SI4435BDY
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SI4435BDY Summary of contents
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... DS(on) 0.020 @ V GS −30 −30 0.035 @ Ordering Information: Si4435BDY-T1 Si4435BDY-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...
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... Si4435BDY www.DataSheet4U.com Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... V − Source-to-Drain Voltage (V) SD Document Number: 72123 S-50694—Rev. C, 18-Apr- 25_C J 0.8 1.0 1.2 1.4 Si4435BDY Vishay Siliconix Capacitance 2400 1800 C iss 1200 600 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si4435BDY www.DataSheet4U.com Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 250 100 125 150 Safe Operating Area, Junction-to-Ambient 100 ...
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... Package Reliability represent a composite of all qualified locations. http://www.vishay.com/ppg?72123. Document Number: 72123 S-50694—Rev. C, 18-Apr-05 Normalized Thermal Transient Impedance, Junction-to-Foot −3 − Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si4435BDY Vishay Siliconix − www.vishay.com 5 ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product ...