SI4110DY Vishay Siliconix, SI4110DY Datasheet - Page 4

• Manufacturer Part Number: SI4110DY
• Description: N-Channel 80-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si4110DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
10
5
4
3
2
1
0
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
T
0.4
J
J
25
- Temperature (°C)
= 150 °C
0.6
50
I
D
Limited by R
= 250 µA
0.01
100
0.1
75
10
1
0.1
0.8
T
J
= 25 °C
100
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
T
A
GS
DS(on)
= 25 °C
1.0
> minimum V
125
V
DS
*
New Product
- Drain-to-Source Voltage (V)
150
1.2
1
GS
at which R
BVDSS Limited
10
DS(on)
0.04
0.03
0.02
0.01
is specified
150
120
90
60
30
0
0
0.01
4
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
100
100 µs
1 ms
10 ms
1 s
10 s
DC
100 ms
5
V
GS
- Gate-to-Source Voltage (V)
0.1
6
Time (s)
7
S-81713-Rev. A, 04-Aug-08
Document Number: 68766
T
J
T
J
= 125 °C
= 25 °C
1
8
9
10
10
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