2SK3991 NEC, 2SK3991 Datasheet

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2SK3991

Manufacturer Part Number
2SK3991
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC
Datasheet

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Document No. D17434EJ2V0DS00 (2nd edition)
Date Published February 2005 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Low on-state resistance
• Low C
• 5 V drive available
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
R
The 2SK3991 is N-channel MOS FET device that
DS(on)1
2. Starting T
iss
= 13.0 mΩ MAX. (V
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 830 pF TYP.
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
Note2
DS
C
GS
= 25°C)
GS
= 0 V)
= 0 V)
DD
= 10 V, I
= 12.5 V, R
N-CHANNEL POWER MOS FET
The mark ★ shows major revised points.
D
= 15 A)
I
A
I
D(pulse)
V
V
D(DC)
P
P
T
E
T
I
= 25°C)
GSS
DSS
AS
stg
AS
T1
T2
ch
G
DATA SHEET
= 25 Ω, V
SWITCHING
−55 to +150
MOS FIELD EFFECT TRANSISTOR
GS
±120
22.5
150
±20
±30
1.0
25
21
15
= 20 → 0 V
ORDERING INFORMATION
PART NUMBER
2SK3991-ZK
2SK3991
mJ
°C
°C
W
W
V
V
A
A
A
2SK3991
(TO-251)
(TO-252)
TO-252 (MP-3ZK)
TO-251 (MP-3)
PACKAGE
2005

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2SK3991 Summary of contents

Page 1

... DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance R = 13.0 mΩ MAX DS(on)1 GS • Low 830 pF TYP ...

Page 2

... µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ µ ≤ Duty Cycle 1% ch Data Sheet D17434EJ2V0DS 2SK3991 MIN. TYP. MAX. UNIT µ ±100 nA 2.0 2.5 3 10.3 13.0 mΩ 17.4 30.2 mΩ 830 pF 200 pF 140 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 100 R th(ch-A) R th(ch- 100 Pulse Width - s Data Sheet D17434EJ2V0DS 2SK3991 50 75 100 125 150 175 - Case Temperature - ° 125°C/W = 5.95°C/W Single pulse 100 1000 3 ...

Page 4

... Pulsed 0.1 0.1 125 175 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 V Data Sheet D17434EJ2V0DS 2SK3991 = −55°C ch −25°C 25°C 75°C 125°C 150° Pulsed Gate to Source Voltage - −55°C ch − ...

Page 5

... DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 Diode Forward Current - A F Data Sheet D17434EJ2V0DS 2SK3991 C iss C oss C rss 1 10 100 12 ...

Page 6

... Starting T = 25° 0.01 0 Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 Starting T - Starting Channel Temperature - °C ch Data Sheet D17434EJ2V0DS 2SK3991 Ω → ≤ 100 125 150 ...

Page 7

... Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 2) TO-252 (MP-3ZK) 0.5 ±0.1 6.5±0.2 5.1 TYP. 4.3 MIN 1.14 MAX. 2.3 2.3 Data Sheet D17434EJ2V0DS 2SK3991 2.3±0.1 0.5±0.1 No Plating No Plating 0.76±0. 0.25 0.5±0.1 1.0 1. Gate 2. Drain 3. Source 4. Fin (Drain) 7 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3991 M8E 02. 11-1 ...

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