2SK3507 NEC, 2SK3507 Datasheet

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2SK3507

Manufacturer Part Number
2SK3507
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC
Datasheet

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www.DataSheet4U.com
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
DESCRIPTION
a low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.
FEATURES
• 4.5 V drive available
• Low on-state resistance
• Low gate charge
• Built-in G-S protection diode
• Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The 2SK3507 is N-channel MOS FET device that features
R
Q
DS(on)1
G
= 8.5 nC TYP. (V
2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3. Starting T
= 45 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
DD
= 25°C)
Note2
= 24 V, V
Note3
Note3
DS
C
GS
GS
= 25°C)
= 0 V)
= 0 V)
= 10 V, I
DD
GS
= 15 V, R
N-CHANNEL POWER MOS FET
= 10 V, I
D
= 11 A)
A
G
= 25°C)
D
= 25 Ω, V
DATA SHEET
I
= 22 A)
D(pulse)
V
I
V
D(DC)
T
E
P
P
T
SWITCHING
I
DSS
GSS
AS
stg
AS
T1
T2
ch
GS
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V
−55 to +150
±16
±22
±45
150
1.5
30
20
10
10
ORDERING INFORMATION
PART NUMBER
mJ
°C
°C
W
W
V
V
A
A
A
2SK3507-ZK
2SK3507
TO-252 (MP-3ZK)
PACKAGE
2001

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2SK3507 Summary of contents

Page 1

... DESCRIPTION The 2SK3507 is N-channel MOS FET device that features www.DataSheet4U.com a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance mΩ MAX. (V DS(on)1 • Low gate charge ...

Page 2

... D.U. 10% Wave Form 90 10% 10 Wave Form t t d(on 2SK3507 UNIT µ A µ mΩ mΩ 90 90 d(off off ...

Page 3

... 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 µ µ 10 100 100 Pulse Width - s Data Sheet D15387EJ1V0DS 2SK3507 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 125 150 - Case Temperature - ° 83.3°C/W ...

Page 4

... V Pulsed 100 150 100 - Drain Current - A Data Sheet D15387EJ1V0DS 2SK3507 FORWARD TRANSFER CHARACTERISTICS 100 −55° 25°C 75°C 150°C 0 Pulsed 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs ...

Page 5

... Ω d(off 100 - Drain Current - Pulsed 1 1.5 Data Sheet D15387EJ1V0DS 2SK3507 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 MHz 1000 100 10 0.01 0 Drain to Source Voltage - V DS DYNAMIC INPUT/OUTPUT CHARACTERISTICS ...

Page 6

... Ω → Starting T www.DataSheet4U.com ch 0.1 0. Inductive Load - 25°C 0 Data Sheet D15387EJ1V0DS 2SK3507 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Ω 100 → ≤ ...

Page 7

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2.3±0.1 0.5±0.1 No Plating 3 No Plating 0.77±0.1 0.03 to 0.25 0.5±0.1 1.0 1.Gate 2.Drain 3.Source 4.Fin (Drain) Data Sheet D15387EJ1V0DS 2SK3507 7 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3507 M8E 02. 11-1 ...

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