2SK3192 Panasonic Semiconductor, 2SK3192 Datasheet - Page 2

• Manufacturer Part Number: 2SK3192
• Description: Silicon N-channel power MOSFET
• Manufacturer: Panasonic Semiconductor

2SK3192
■ Electrical Characteristics (continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Gate-source charge
Gate-drain charge
Thermal resistance (ch-c)
Thermal resistance (ch-a)
10
10
10
10
50
40
30
20
10
−1
1
0
3
2
1
0
I
I
DP
D
Drain-source voltage V
V
T
C
DS
Safe operation area
= 25°C
DC
= 10 V
2
Drain current I
1 ms
Parameter
10
10 ms
V
GS
4
100 ms
 I
t = 100 µs
Non repetitive pulse
T
C
= 25°C
6
D
10
D
2
( A )
DS
8
( V )
10
10
3
Symbol
R
R
V
th(ch-c)
th(ch-a)
Q
Q
Q
Q
t
DSF
rr
gs
gd
rr
g
120
100
100
80
60
40
20
80
60
40
20
0
0
0
0
(1)
(2)
I
L = 230 µH, V
I
V
V
DR
DR
Ambient temperature T
DD
GS
C
= 30 A, V
= 15 A, di/dt = 100 A/µs
SJG00029BED
= 10 V
= 25°C ± 3°C
= 100 V, I
Drain current I
R
50
10
DS(on)
P
D
(1) T
(2) Without heat sink
 T
Conditions
GS
P
DD
C
D
D
 I
= T
= 3 W
= 0
= 15 A
100
= 100 V
a
D
20
a
D
V
T
( A )
a
C
GS
= 25°C
( °C )
= 10 V
150
30
30
25
20
15
10
30
25
20
15
10
5
0
5
0
Min
0
0
Drain-source voltage V
5
2
V
5 V
Drain current I
GS
Typ
260
10
1.6
95
34
12
4
= 10 V
Y
I
D
15
fs
 V
6
  I
Max
−1.5
1.25
41.7
20
8
DS
D
4.5 V
D
V
T
25
10
4 V
3 V
( A )
C
DS
T
DS
= 25°C
C
= 10 V
°C/W
°C/W
= 25°C
Unit
12
30
( V )
µC
nC
nC
nC
ns
V
35
14