2SK3113B NEC, 2SK3113B Datasheet - Page 2

• Manufacturer Part Number: 2SK3113B
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: NEC

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
2
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= 20 → 0 V
CHARACTERISTICS
I
PG.
G
V
50 Ω
= 2 mA
DD
I
R
D
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
Note
Note
DSS
Starting T
V
R
V
DS
DD
L
Note
L
V
ch
DD
SYMBOL
V
R
V
| y
t
t
I
I
C
Q
Q
C
C
GS(off)
Q
DS(on)
d(on)
d(off)
F(S-D)
Q
DSS
GSS
A
t
t
t
oss
GD
fs
iss
rss
GS
rr
r
f
G
rr
= 25°C)
|
Data Sheet D18061EJ3V0DS
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
R
V
V
I
I
I
di/dt = 50 A/
D
F
F
V
0
DS
GS
DS
DS
GS
DS
GS
DD
GS
G
L
DD
GS
= 2.0 A, V
= 2.0 A, V
GS
= 2.0 A
τ = 1 s
Duty Cycle ≤ 1%
= 10 Ω
PG.
= 10 Ω
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V
= ±30 V, V
= 10 V, I
= 0 V
= 150 V, I
= 10 V
= 450 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
μ
τ
TEST CONDITIONS
GS
GS
μ
D
D
D
s
R
D
= 1 mA
= 1.0 A
= 1.0 A
GS
DS
= 0 V
= 0 V
G
= 1.0 A
D.U.T.
= 0 V
= 0 V
R
V
L
DD
V
Wave Form
I
Wave Form
D
GS
MIN.
2.5
0.5
V
I
D
GS
0
0
10%
TYP.
10%
t
10.5
15.8
10.5
290
190
500
0.9
3.2
4.8
7.9
2.7
3.2
0.8
d(on)
75
7
t
90%
on
MAX.
t
r
2SK3113B
100
±10
3.5
4.4
V
I
D
GS
t
d(off)
t
UNIT
off
90%
μ
μ
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
90%
Ω
V
S
V
A
A
t
10%
f