2SK3028 Panasonic Semiconductor, 2SK3028 Datasheet

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2SK3028

Manufacturer Part Number
2SK3028
Description
Silicon N-Channel Power F-MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Low-voltage drive
High electrostatic breakdown voltage
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 0.1mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
L
= 100A, 1 pulse
DC
Pulse
T
Ta = 25°C
C
= 25°C
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
R
| Y
V
C
C
C
t
t
t
t
R
R
d(on)
r
f
d(off)
D
DP
DSS
GSS
D
ch
stg
DS(on)1
DS(on)2
iss
oss
rss
th(ch-c)
th(ch-a)
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
GS
DS
DS
DD
GS
55 to +150
Ratings
= 1mA, V
= 50A, V
±100
±200
= 50V, V
= ±20V, V
= 10V, I
= 10V, I
= 4V, I
= 10V, I
= 10V, V
= 10V, R
= 30V, I
±20
500
100
150
60
3
D
Conditions
GS
D
D
D
GS
D
= 50A
GS
GS
L
= 1mA
= 50A
= 50A
= 50A
DS
= 0
= 0.6
= 0
= 0
= 0, f = 1MHz
= 0
Unit
mJ
°C
°C
W
V
V
A
A
Internal Connection
5.45±0.3
1.1±0.1
min
2.0±0.2
6.5
60
50
1
5
4.0
1
15.5±0.5
G
2
9400
3300
1800
2400
100
280
830
typ
3
40
5.45±0.3
3.2±0.1
S
max
1.25
41.7
±10
2.5
7.5
10
10
1.2
TOP-3E Package
D
0.7±0.1
1: Gate
2: Drain
3: Source
3.0±0.3
unit: mm
°C/W
°C/W
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
A
A
1

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