2SK30 Panasonic Semiconductor, 2SK30 Datasheet - Page 2

• Manufacturer Part Number: 2SK30
• Description: Silicon N-Channel Power F-MOS FET
• Manufacturer: Panasonic Semiconductor

Power F-MOS FETs
2
0.03
0.01
10
10
100
10
0.3
0.1
30
10
10
10
–1
–2
3
1
8
6
4
2
0
1
10
2
1
0
Area of safe operation (ASO)
Drain to source voltage V
Gate to source voltage V
–4
(1) Without heat sink
(2) With a 100
3
2
10
–3
10
10ms
I
D
DC
100ms
4
100
30
Non repetitive pulse
T
10
C
V
=25˚C
–2
GS
6
2mm Al heat sink
25˚C
100
0˚C
V
T
DS
C
300
10
8
GS
t=1ms
DS
=100˚C
=25V
–1
R
( V )
( V )
Time t ( s )
1000
th(t)
10
1
t
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
10
0
0
0
0
Ambient temperature Ta ( ˚C )
20
Drain current I
10
40
2
R
2
DS(on)
P
60
D
(1)
(2)
(1) T
(2) Without heat sink
80
10
4
3
Ta
(1)
(2)
C
T
=Ta
100
C
=100˚C
I
D
D
25˚C
120
6
( A )
10
V
0˚C
GS
4
140
=10V
160
8
0.03
0.01
0.3
0.1
10
3
1
5
4
3
2
1
0
0.1
0
V
IAS max.
DS
=25V
Drain current I
0.3
IAS
2
| Y
L-load ( mH )
fs
|
1
4
L-load
T
C
2SK3049
=0˚C
I
D
D
25˚C
100˚C
3
6
( A )
T
C
62.5mJ
=25˚C
10
8