2SK2129 Panasonic Semiconductor, 2SK2129 Datasheet - Page 2

• Manufacturer Part Number: 2SK2129
• Description: Silicon N-Channel Power F-MOS FET
• Manufacturer: Panasonic Semiconductor

Power F-MOS FETs
2
0.01
100
0.1
10
80
70
60
50
40
30
20
10
4
3
2
1
0
1
0
1
0
0
Drain to source voltage V
Drain to source voltage V
Area of safe operation (ASO)
Gate to source voltage V
V
I
DP
I
D
GS
=15V
10
5
10V
6V
V
10
20
10
I
D
DS
1ms
10ms
Non repetitive pulse
T
C
30
15
=25˚C
V
V
DS
5.5V
100
GS
40
20
5V
4.5V
DC
t=100 s
T
T
GS
DS
DS
C
50
C
25
I
D
1.5A
=25˚C
=25˚C
3A
4V
=6A
50W
( V )
( V )
( V )
1000
60
30
60
50
40
30
20
10
12
10
0
5
4
3
2
1
0
8
6
4
2
0
0
0
0
Gate to source voltage V
Ambient temperature Ta ( ˚C )
20
2
Drain current I
1
25˚C
40
R
T
C
I
DS(on)
P
4
=0˚C
D
60
D
2
(1)
(2)
(1) T
(2) Without heat sink
80 100 120 140 160
6
V
(P
Ta
C
150˚C
GS
D
=Ta
100˚C
3
=2W)
I
8
D
D
T
V
( A )
C
V
GS
=150˚C
GS
4
DS
10
100˚C
=10V
=25V
25˚C
0˚C
( V )
12
5
3.0
2.5
2.0
1.5
1.0
0.5
30
25
20
15
10
5
0
0
6
5
4
3
2
1
0
25
0
0
Junction temperature T
V
T
Case temperature T
C
DS
=25˚C
=25V
50
25
Drain current I
1
| Y
EAS
75
50
V
th
2
fs
100
|
75
T
2SK2129
3
T
I
125
C
100
D
D
j
V
I
C
V
I
D
( A )
D
DD
DS
=3A
=1mA
j
4
150
125
( ˚C )
=50V
=25V
( ˚C )
175
150
5