2SK2124 Panasonic Semiconductor, 2SK2124 Datasheet - Page 2

• Manufacturer Part Number: 2SK2124
• Description: Silicon N-Channel Power F-MOS FET
• Manufacturer: Panasonic Semiconductor

Power F-MOS FETs
2
0.03
0.01
100
0.3
0.1
2.4
2.0
1.6
1.2
0.8
0.4
30
10
16
14
12
10
3
1
8
6
4
2
0
0
1
0
0
Area of safe operation (ASO)
Drain to source voltage V
Drain to source voltage V
I
V
I
DP
D
GS
=15V
10
3
Drain current I
10V
2
R
1ms
10ms
10
20
I
DS(on)
D
4
30
30
Non repetitive pulse
T
C
V
=25˚C
DS
6
7V
100
40
I
D
D
DC
6V
T
V
( A )
t=100 s
C
T
5.5V
GS
300
=150˚C
8
DS
DS
C
50
0˚C
100˚C
=25˚C
=10V
25˚C
5V
50W
( V )
( V )
1000
60
10
2.4
2.0
1.6
1.2
0.8
0.4
60
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
0
Gate to source voltage V
Ambient temperature Ta ( ˚C )
20
2
Drain current I
2
40
R
T
I
DS(on)
P
4
C
D
60
=0˚C
D
25˚C
4
(1)
(2)
(1) T
(2) Without heat sink
80 100 120 140 160
6
V
(P
100˚C
Ta
C
150˚C
GS
D
=Ta
6
=2W)
I
D
8
D
V
( A )
T
GS
V
C
GS
8
DS
10
=25˚C
=10V
15V
=25V
( V )
12
10
240
200
160
120
80
40
12
10
0
6
5
4
3
2
1
0
8
6
4
2
0
25
0
0
Junction temperature T
Case temperature T
50
25
Drain current I
2
| Y
EAS
75
50
V
th
4
fs
100
|
75
T
2SK2124
6
T
I
125
C
100
D
D
j
V
I
V
I
C
D
D
( A )
V
T
DD
DS
=8A
=1mA
j
DS
C
150
125
8
=25˚C
( ˚C )
=50V
=25V
=25V
( ˚C )
175
150
10