2SK2123 Panasonic Semiconductor, 2SK2123 Datasheet - Page 2

• Manufacturer Part Number: 2SK2123
• Description: Silicon N-Channel Power F-MOS FET
• Manufacturer: Panasonic Semiconductor

Power F-MOS FETs
2
0.03
0.01
100
0.3
0.1
30
10
40
35
30
25
20
15
10
3
1
8
7
6
5
4
3
2
1
0
5
0
1
0
0
Area of safe operation (ASO)
Drain to source voltage V
Drain to source voltage V
Gate to source voltage V
V
I
I
DP
D
GS
=15V
10
3
10V
5
6.5V
1ms
V
10ms
10
20
10
I
D
DS
30
30
15
Non repetitive pulse
T
C
V
=25˚C
V
DS
6V
GS
100
40
20
DC
5.5V
t=100 s
5V
T
T
300
GS
DS
DS
C
50
C
25
10A
5A
2.5A
=25˚C
=25˚C
50W
4.5V
( V )
( V )
( V )
1000
60
30
60
50
40
30
20
10
10
0
8
6
4
2
0
6
5
4
3
2
1
0
0
0
0
Gate to source voltage V
Ambient temperature Ta ( ˚C )
20
2
Drain current I
2
40
R
25˚C
I
DS(on)
P
T
4
D
60
C
D
=0˚C
4
(1)
(2)
T
(1) T
(2) Without heat sink
C
80 100 120 140 160
=150˚C
6
V
100˚C
0˚C
(P
25˚C
Ta
C
GS
D
=Ta
6
=2W)
I
150˚C
D
100˚C
8
D
V
( A )
V
GS
GS
8
DS
10
=10V
=25V
( V )
12
10
120
100
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
6
5
4
3
2
1
0
0
25
0
0
Junction temperature T
V
T
Case temperature T
C
DS
=25˚C
=25V
50
25
Drain current I
1
| Y
EAS
75
50
V
th
2
fs
100
|
75
T
2SK2123
3
T
I
125
C
100
D
D
j
C
V
I
V
I
D
D
( A )
DD
DS
=5A
=1mA
j
4
150
125
=25V
( ˚C )
=50V
( ˚C )
175
150
5