2SK1301 Hitachi Semiconductor, 2SK1301 Datasheet - Page 6

• Manufacturer Part Number: 2SK1301
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1301
6
500
200
100
50
20
10
100
5
80
60
40
20
0.2
0
Reverse Drain Current I
V
V
Body to Drain Diode Reverse
V
DS
50 V
DD
0.5
Dynamic Input Characteristics
di/dt = 50 A/ s, Ta = 25°C
V
Pulse Test
DD
25 V
GS
20
= 80 V
Gate Charge Qg (nc)
= 25 V
= 0
50 V
80 V
1.0
Recovery Time
40
2
V
GS
60
I
5
D
DR
= 15 A
80
(A)
10
20
100
20
16
12
8
4
0
10000
1000
500
200
100
100
50
20
10
10
5
0.2
0
Drain to Source Voltage V
0.5
Switching Characteristics
10
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
1
t
t
f
r
t
d (off)
Coss
Ciss
Crss
20
t
V
PW = 2 s, duty < 1 %
d (on)
GS
2
= 10 V V
30
D
5
(A)
DD
V
f = 1 MHz
DS
GS
40
10
= 30 V
•
•
(V)
= 0
20
50