2SK1301 Hitachi Semiconductor, 2SK1301 Datasheet - Page 4

• Manufacturer Part Number: 2SK1301
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1301
4
60
40
20
0
20
16
12
8
4
0
10 V
Power vs. Temperature Derating
Drain to Source Voltage V
Case Temperature T
Typical Output Characteristics
4 V
4
50
7 V
7 V
8
V
GS
= 2.5 V
100
12
3.5 V
2.5 V
C
3 V
Pulse Test
(°C)
DS
16
(V)
150
20
100
0.3
0.1
30
10
20
16
12
3
1
8
4
0
0
1
Operation in this area
is limited by R
Drain to Source Voltage V
Gate to Source Voltage V
Maximum Safe Operation Area
Typical Transfer Characteristics
T
3
C
V
–25°C
Pulse Test
1
DS
= 25°C
75°C
10
= 10 V
2
DS (on)
30
3
100
Ta = 25°C
GS
DS
300
4
(V)
(V)
1000
5