2SK1300 Hitachi Semiconductor, 2SK1300 Datasheet - Page 6

• Manufacturer Part Number: 2SK1300
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1300
6
500
200
100
50
20
10
200
160
120
5
80
40
0.1
0
V
0.2
Reverse Drain Current I
DS
Body to Drain Diode Reverse
Dynamic Input Characteristics
V
8
DD
Gate Charge Qg (nc)
V
0.5
DD
= 25 V
Recovery Time
50 V
80 V
= 80 V
50 V
25 V
16
di/dt = 50 A/ s
Pulse Test
V
1
GS
= 0, Ta = 25°C
24
2
I
D
DR
= 10 A
V
32
GS
(A)
5
10
40
20
16
12
8
4
0
10,000
1,000
500
200
100
100
50
20
10
10
5
0.2
0
V
f = 1 MHz
GS
Drain to Source Voltage V
t
d (off)
0.5
= 0
Switching Characteristics
10
Drain to Source Voltage
Typical Capacitance vs.
Drain Current I
t
f
1
t
20
V
d (on)
duty < 1 % V
GS
2
Ciss
= 10 V, PW = 2 s
t
r
Coss
30
D
5
(A)
Crss
DD
DS
40
10
= . .
(V)
30 V
20
50