2SK1300 Hitachi Semiconductor, 2SK1300 Datasheet - Page 5

• Manufacturer Part Number: 2SK1300
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2.5
2.0
1.5
1.0
0.5
0.5
0.4
0.3
0.2
0.1
0
0
–40
0
Pulse Test
Drain to Source Saturation Voltage
Gate to Source Voltage V
Static Drain to Source on State
vs. Gate to Source Voltage
V
2
Resistance vs. Temperature
Case Temperature T
GS
0
10 V
= 4 V
4
40
I
6
D
80
= 10 A
Pulse Test
I
C
10 A
D
GS
5 A
8
= 2 A
(°C)
120
2 A
(V)
10 A
5 A
2 A
5 A
10
160
0.5
0.05
50
10
20
0.5
0.2
0.1
5
2
1
0.1
5
2
1
0.5
V
Pulse Test
DS
Pulse Test
0.2
Forward Transfer Admittance
= 10 V
Static Drain to Source on State
Resistance vs. Drain Current
1
V
Drain Current I
GS
Drain Current I
vs. Drain Current
0.5
2
= 4 V
1
T
5
C
= –25°C
D
2
10
D
(A)
(A)
25°C
75°C
20
5
2SK1300
10 V
10
50
5