TP0101T Vishay Siliconix, TP0101T Datasheet

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TP0101T

Manufacturer Part Number
TP0101T
Description
P-Channel 20-V (D-S) MOSFET/ Low-Threshold
Manufacturer
Vishay Siliconix
Datasheet

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TP0101T
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Notes
a.
b.
c.
Document Number: 70229
S-04279—Rev. D, 16-Jul-01
D High-Side Switching
D Low On-Resistance: 0.45 W
D Low Threshold: 0.9 V (typ)
D Fast Switching Speed: 32 ns
D 2.5-V or Lower Operation
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
V
DS
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t v 10 sec.
Copper lead frame.
–20
(V)
0.65 @ V
0.85 @ V
b
r
DS(on)
a
P-Channel 20-V (D-S) MOSFET, Low-Threshold
GS
GS
= –4.5 V
= –2.5 V
J
(W)
= 150_C)
_
Parameter
Parameter
b
b
TP0101T
–0.6
–0.5
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
b
G
S
I
1
2
D
(A)
TP0101TS
(SOT-23)
Top View
TO-236
–1.0
–0.9
T
T
T
T
A
A
A
A
_
= 25_C
= 70_C
= 25_C
= 70_C
3
D
Marking Code:
TP0101T: POwll
TP0101TS: PSwll
w = Week Code
l = Lot Traceability
Symbol
Symbol
T
D Drivers: Relays, Solenoids, Lamps, Hammers,
D Battery Operated Systems, DC/DC Converters
D Power Supply Converter Circuits
D Load/Power Switching–Cell Phones, Pagers
R
J
V
V
I
P
, T
DM
I
I
thJA
DS
GS
D
S
D
Displays, Memories
stg
TP0101T
TP0101T
–55 to 150
–0.48
–0.6
–0.6
0.35
0.22
–20
357
"8
–3
TP0101TS
TP0101TS
Vishay Siliconix
–55 to 150
–1.0
–0.8
–1.0
0.65
–20
"8
125
1.0
–3
TP0101T/TS
c
c
Unit
Unit
_C/W
www.vishay.com
_C
W
V
A
11-1

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TP0101T Summary of contents

Page 1

... D Drivers: Relays, Solenoids, Lamps, Hammers, D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power Switching–Cell Phones, Pagers TO-236 (SOT-23) Top View Marking Code TP0101T: POwll TP0101TS: PSwll Week Code Lot Traceability _ Symbol T = 25_C 70_C ...

Page 2

... TP0101T/TS Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... V –1.5 V –0. – – 350 300 250 200 150 100 V = –4 – – – 1800 2400 3000 TP0101T/TS Vishay Siliconix Transfer Characteristics 2 –55_C A 1.5 25_C 1.0 0.5 0.0 – – – – 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance ...

Page 4

... TP0101T/TS Vishay Siliconix Source-Drain Diode Forward Voltage – 50_C J – 25_C J – 0.1 – 0.01 – – 0.0 0.5 1.0 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.34 0.24 0.14 0.04 –0.06 –0.16 – – Junction Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com ...

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