SI2305CDS Vishay Siliconix, SI2305CDS Datasheet - Page 4

• Manufacturer Part Number: SI2305CDS
• Description: P-Channel 8 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si2305CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
V
T
I
D
J
SD
= 250 µA
= 150 °C
0.3
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
- Temperature (°C)
25
0.6
50
75
0.01
100
T
0.1
10
J
1
0.9
100
= 25 °C
0.1
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
GS
T
A
> minimum V
= 25 °C
V
Limited by R
1.2
150
DS
- Drain-to-Source Voltage (V)
GS
DS(on)
at which R
1
*
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
BVDSS
Limited
30
25
20
15
10
5
0
0.001
0.0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
0.5
D
= 2 A, T
0.01
1.0
10 ms
1 s, 10 s
1 ms
100 ms
DC
V
10
GS
J
1.5
- Gate-to-Source Voltage (V)
= 25 °C
0.1
2.0
I
D
I
Time (s)
D
= 2 A, T
= 4.4 A, T
I
D
2.5
S10-0720-Rev. C, 29-Mar-10
= 4.4 A, T
1
Document Number: 64847
J
3.0
= 125 °C
J
10
= 125 °C
3.5
J
= 25 °C
4.0
100
4.5
1000
5.0
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