IRFZ48V International Rectifier, IRFZ48V Datasheet - Page 4

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IRFZ48V

Manufacturer Part Number
IRFZ48V
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet

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IRFZ48V
4
1000
4000
3000
2000
1000
100
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
0.1
10
1
0
0.2
1
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
V
Forward Voltage
Forward Voltage
SD
T = 175 C
V DS , Drain-to-Source Voltage (V)
J
0.6
,Source-to-Drain Voltage (V)
V GS = 0V,
C is = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
°
= C gd
1.0
10
T = 25 C
Crss
Coss
J
Ciss
f = 1 MHZ
°
1.4
V
GS
= 0 V
1.8
100
1000
100
Fig 8. Maximum Safe Operating Area
10
20
15
10
1
5
0
1
0
Single Pulse
T
T
I =
Fig 6. Typical Gate Charge Vs.
D
C
J
= 25 C
= 175 C
OPERATION IN THIS AREA LIMITED
72A
V
Gate-to-Source Voltage
20
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
40
BY R
V
V
V
60
DS
DS
DS
DS(on)
= 48V
= 30V
= 12V
10us
100us
1ms
10ms
100
80
www.irf.com
100
1000
120

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