IRFZ48V International Rectifier, IRFZ48V Datasheet - Page 2

• Manufacturer Part Number: IRFZ48V
• Description: Power MOSFET
• Manufacturer: International Rectifier

Source-Drain Ratings and Characteristics
IRFZ48V
Electrical Characteristics @ T

‚
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
fs
D
S
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
G
= 25 , I
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 64µH
AS
= 72A. (See Figure 12)

Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
I
Pulse width
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
SD
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
35
–––
60
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
72A, di/dt
0.064 –––
1985 –––
–––
–––
–––
–––
–––
–––
–––
–––
200
166
496
–––
–––
–––
155
––– 12.0
––– -100
–––
157
7.6
4.5
7.5
91
70
–––
–––
–––
250
100
110
–––
–––
–––
–––
–––
–––
233
–––
100
4.0
300µs; duty cycle
2.0
29
25
36
290
72
151A/µs, V
V/°C
m
nC
nH
nC
µA
nA
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
di/dt = 100A/µs
MOSFET symbol
T
integral reverse
D
D
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 72A
= 72A
= 25°C, I
= 25°C, I
= 0.34 , See Fig. 10 „
= 9.1
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 0V
= 25V
V
2%.
(BR)DSS
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 72A
= 72A, V
,
= 43A
= 250µA
= 43A„
„
= 0V
= 0V, T
D
GS
= 1mA
„
J
www.irf.com
= 150°C
= 0V
G
G
S
„
+L
„
D
D
S
S
)
D