IRFS31N20D IRF, IRFS31N20D Datasheet - Page 4

• Manufacturer Part Number: IRFS31N20D
• Description: Power MOSFET
• Manufacturer: IRF

IRFB/IRFS/IRFSL31N20D
100000
10000
4
1000
100
1000
10
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V
V DS , Drain-to-Source Voltage (V)
SD
0.4
T = 175 C
Forward Voltage
J
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
0.6
°
Ciss
Crss
Coss
T = 25 C
0.8
J
f = 1 MHZ
100
°
V
1.0
GS
SHORTED
= 0 V
1.2
1000
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
18A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
20
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
40
BY R
DS(on)
V
V
V
FOR TEST CIRCUIT
60
DS
DS
DS
SEE FIGURE
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100
= 160V
= 100V
= 40V
10us
100us
1ms
10ms
80
13
1000
100