IRFS31N20D IRF, IRFS31N20D Datasheet - Page 2

• Manufacturer Part Number: IRFS31N20D
• Description: Power MOSFET
• Manufacturer: IRF

IRFB/IRFS/IRFSL31N20D
Diode Characteristics
Avalanche Characteristics
Thermal Resistance
Static @ T
Dynamic @ T
R
E
I
E
R
R
R
R
V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
2
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
JC
CS
JA
JA
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
17
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.25
2370 –––
2860 –––
–––
––– 0.082
–––
–––
–––
–––
––– -100
170
–––
–––
–––
200
–––
390
150
1.7
70
16
10
18
33
38
26
78
–––
–––
250
100
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
300
5.5
1.3
2.6
25
124
27
49
31
V/°C
µA
nA
nC
µC
ns
pF
ns
V
V
S
A
V
Typ.
Typ.
0.50
–––
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
MOSFET symbol
integral reverse
D
I
GS
GS
DS
DS
DS
GS
GS
J
J
DS
DS
GS
DD
GS
DS
GS
GS
GS
D
G
D
= 18A
= 25°C, I
= 25°C, I
= 18A
= 5.4
= 2.5
= V
= 200V, V
= 160V, V
= 0V, I
= 10V, I
= 30V
= -30V
= 50V, I
= 160V
= 25V
= 10V,
= 100V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
D
DS
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 18A, V
= 18A
= 250µA
= 18A
= 18A
GS
GS
= 0V to 160V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
0.75
420
–––
18
20
62
40
= 0V
= 0V, T
www.irf.com
D
GS
= 1mA
J
= 0V
G
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)