IRF7601 International Rectifier, IRF7601 Datasheet - Page 2

• Manufacturer Part Number: IRF7601
• Description: Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
• Manufacturer: International Rectifier

Notes:
Electrical Characteristics @ T
IRF7601
Source-Drain Ratings and Characteristics
I
I
V
t
Q
R
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
SM
S
rr
GSS
d(on)
r
d(off)
f
DSS
V
(BR)DSS
DS(on)
GS(th)
fs
SD
iss
oss
rss
rr
g
gs
gd
T
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
J
150°C
3.8A, di/dt
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Gate-to-Source Reverse Leakage
96A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
0.70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.024 –––
–––
–––
–––
6.1
20
Pulse width
Surface mounted on FR-4 board, t
–––
–––
–––
––– -100
150
–––
––– 0.035
––– 0.050
–––
–––
–––
–––
–––
650
300
2.0
6.3
5.1
51
69
14
47
24
32
100
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.8
1.2
1.0
3.0
9.5
30
77
25
22
300µs; duty cycle
V/°C
nC
nC
µA
ns
pF
ns
nA
V
V
V
S
A
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 3.8A
= 3.8A
= 25°C, I
= 25°C, I
= 6.2
= 2.6
= V
= 10V, I
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.7V, I
= -12V
= 12V
= 4.5V, See Fig. 6 and 9
= 10V
= 0V
GS
, I
D
See Fig. 10
S
F
D
D
Conditions
2%.
= 250µA
D
D
GS
GS
= 3.8A, V
= 3.8A
= 250µA
= 1.9A
= 3.8A
= 1.9A
= 0V
= 0V, T
10sec.
Conditions
D
= 1mA
GS
J
= 125°C
= 0V
G
D
S