IRF7335D1 International Rectifier, IRF7335D1 Datasheet - Page 5

• Manufacturer Part Number: IRF7335D1
• Description: Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE
• Manufacturer: International Rectifier

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Fig 13. Typical Capacitance Vs.Drain-to-Source Voltage
Fig. 15. Gate-to-Source Voltage vs Typical Gate Charge
2500
2000
1500
1000
500
1000
0
100
0.1
10
12
10
1
8
6
4
2
0
1
0.1
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 8.0A
Q1 - Control FET
V DS , Drain-to-Source Voltage (V)
V DS , Drain-toSource Voltage (V)
5
Q G Total Gate Charge (nC)
1.0
V GS = 0V,
C iss
SHORTED
C rss
C oss
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
Coss
Crss
Ciss
V DS = 24V
VDS= 15V
= C ds + C gd
= C gd
= C gs + C gd , C ds
10
10.0
15
f = 1 MHZ
20
100µsec
10msec
1msec
100.0
25
Typical Characteristics
1000.0
100
30
Fig. 16. Gate-to-Source Voltage vs Typical Gate Charge
Fig 14. Typical Capacitance Vs.Drain-to-Source Voltage
4000
3500
3000
2500
2000
1500
1000
Q2 - Synchronous FET & Schottky
500
1000
100
0
0.1
12
10
10
8
6
4
2
0
1
1
0.1
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 8.0A
V DS , Drain-to-Source Voltage (V)
V DS , Drain-toSource Voltage (V)
5
Q G Total Gate Charge (nC)
1.0
V GS = 0V,
C iss
SHORTED
C rss
C oss = C ds + C gd
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Coss
Crss
V DS = 24V
VDS= 15V
Ciss
= C gd
= C gs + C gd ,
10
10.0
15
f = 1 MHZ
20
100µsec
10msec
1msec
100.0
25
C ds
1000.0
100
30
5