IRF7335D1 International Rectifier, IRF7335D1 Datasheet - Page 2
IRF7335D1
Manufacturer Part Number
IRF7335D1
Description
Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE
Manufacturer
International Rectifier
Datasheet
1.IRF7335D1.pdf
(12 pages)
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Electrical Characteristics
Source-Drain Rating & Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Breakdown Voltage
Tem. Coefficient
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Forward Transconductance
Total Gate Charge
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
2
gs2
+ Q
gd
)
V
I
I
t
Q
t
Q
S
SM
rr
rr
BV
C
BV
R
V
Q
Q
Q
Q
R
I
I
g
Q
Q
t
t
t
t
C
C
SD
rr
rr
DSS
GSS
d (on)
r
d (off)
f
FS
rss
DS
GS(th)
G
iss
oss
G
GS1
GS2
GD
sw
DSS/
oss
DSS
(on)
T
J
0.025
Min
Q1-Control FET
Min
1.0
30
21
1500
13.4
Typ
310
140
Typ
3.2
1.4
4.1
5.5
7.7
4.3
6.8
5.9
9.1
13
19
28
24
29
26
1
±100
Max
17.5
Max
1.25
0.3
30
20
10
10
81
0.033
Min
Min
1.1
Q2-Synch FET
30
28
& Schottky
2300
0.43
Typ
450
180
Typ
9.6
5.8
1.5
4.9
6.4
2.6
8.8
3.3
7.0
18
17
31
26
31
26
11
±100
Max Units
12.8
Max Units
0.50
5.0
30
10
27
10
81
m
mA
nC
nC
nC
nC
µA
nA
pF
ns
ns
ns
V
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
Clamped Inductive Load
V
MOSFET symbol
showing the
intergral reverse
p-n junction diode
T
T
di/dt = 100A/µs
T
di/dt =100A/µs
GS
GS
DS
DS
DS
GS
GS
GS
DS
DD
GS
DS
J
J
J
= 25°C, I
= 125°C, I
= 125°C, I
=5V, I
=4.5V, I
= V
= 24V, V
= 24V, V
= ±12V
= 16V, V
= 16V, I
= 15V, V
= 0V, I
= 4.5V, I
= 4.5V
GS
Conditions
Conditions
,I
D
D
D
=8.0A, V
D
D
S
= 250µA
= 250µA
D
GS
GS
GS
GS
=8.0A, V
F
F
= 8.0A
= 1.0A,V
= 10A
= 8.0A, V
=8.0A, V
= 0
= 0
= 0
= 0, Tj = 125°C
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DS
G
D
=15V
DS
GS
= 1.0mA
R
=15V
R
= 0V
= 15V
= 15V
D
S