S2006FS221V Teccor Electronics, Inc., S2006FS221V Datasheet - Page 124

• Manufacturer Part Number: S2006FS221V
• Description: Thyristor Product Catalog
• Manufacturer: Teccor Electronics, Inc.

AN1001
Electrical Characteristic Curves of Thyristors
Figure AN1001.12
Figure AN1001.13
Figure AN1001.14
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Reverse Leakage
Current - (I
Specified V
-V
-V
-V
Voltage Drop (V
Specified Current (i
RRM
RRM
) at
Voltage Drop (V
Specified Current (i
V-I Characteristics of SCR Device
V-I Characteristics of Triac Device
V-I Characteristics of Bilateral Trigger Diac
Minimum Holding
Current (I
Breakover
Current
I
BO
Specified Minimum
Breakdown
Reverse Blocking
Reverse
Voltage (V
Voltage
Minimum Holding
Current (I
10 mA
H
T
)
) at
T
)
T
RRM
) at
H
+I
)
-I
T
)
)
+I
-I
Specified Minimum
Voltage (V
+I
-I
Off-state
Blocking
Breakover
Breakover
Voltage
Voltage
V
BO
Latching Current (I
Specified Minimum
DRM
Voltage (V
Off-state Leakage
Current – (I
Specified V
)
Off - State
Blocking
Breakover
Forward
Voltage
V
Latching Current (I
DRM
DRM )
DRM
)
+V
L
+V
)
Off - State Leakage
Current - (I
Specified V
at
L
DRM
)
DRM
AN1001 - 4
) at
+V
Figure AN1001.15
Methods of Switching on Thyristors
Three general methods are available for switching thyristors to
on-state condition:
•
•
•
Application Of Gate Signal
Gate signal must exceed I
used. For an SCR (unilateral device), this signal must be positive
with respect to the cathode polarity. A triac (bilateral device) can
be turned on with gate signal of either polarity; however, different
polarities have different requirements of I
be satisfied. Since diacs and sidacs do not have a gate, this
method of turn-on is not applicable. In fact, the single major
application of diacs is to switch on triacs.
Static dv/dt Turn-on
Static dv/dt turn-on comes from a fast-rising voltage applied
across the anode and cathode terminals of an SCR or the main
terminals of a triac. Due to the nature of thyristor construction, a
small junction capacitor is formed across each PN junction.
Figure AN1001.16 shows how typical internal capacitors are
linked in gated thyristors.
Figure AN1001.16
Application of gate signal
Static dv/dt turn-on
Voltage breakover turn-on
-V
R
S =
(V
(I
Internal Capacitors Linked in Gated Thyristors
BO
V-I Characteristics of a Sidac Chip
S
I
DRM
- I
- V
BO
S
)
I
)
BO
I
I
I
S
T
H
GT
and V
+I
-I
V
T
GT
requirements of the thyristor
V
DRM
V
GT
©2002 Teccor Electronics
Thyristor Product Catalog
S
V
and V
BO
R
S
Application Notes
GT
+V
which must