BTB08-600BW ST Microelectronics, BTB08-600BW Datasheet - Page 6

• Manufacturer Part Number: BTB08-600BW
• Description: 8A TRIACS
• Manufacturer: ST Microelectronics

BTA/BTB08 and T8 Series
6/10
6
5
4
3
2
1
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I t.
1000
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
100
0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
0.1
10
0.01
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
ITSM (A),I t (A s)
TW
25
dI/dt limitation:
50A/µs
1.0
0.10
(dV/dt)c (V/µs)
50
Tj(°C)
tp (ms)
75
10.0
1.00
T835/CW/BW
100
Tj initial=25°C
ITSM
I t
T810/SW
10.00
100.0
125
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
Fig. 10: DPAK and D
junction to ambient versus copper surface under
tab (printed circuit board FR4, copper thickness:
35 µm).
100
90
80
70
60
50
40
30
20
10
-40
0.1
0
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0
Rth(j-a) (°C/W)
B
D PAK
IH & IL
-20
C
4
IGT
8
DPAK
0
12
1.0
20
(dV/dt)c (V/µs)
16
40
S(cm )
2
Tj(°C)
PAK Thermal resistance
20
60
24
10.0
80
28
100
32
120
36
100.0
140
40