BTB08-600BW ST Microelectronics, BTB08-600BW Datasheet - Page 5
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BTB08-600BW
Manufacturer Part Number
BTB08-600BW
Description
8A TRIACS
Manufacturer
ST Microelectronics
Datasheet
1.BTB08-600BW.pdf
(10 pages)
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3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
10
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
Fig. 4: On-state characteristics (maximum
values).
100
9
8
7
6
5
4
3
2
1
0
10
1
0
0.5
0
P (W)
IT(RMS) (A)
ITM (A)
Vto = 0.85 V
Rd = 50 mΩ
Tj max.
1.0
1
(S=0.5cm )
DPAK
25
(S=1cm )
D PAK
1.5
2
2
2
2
Tj=25°C
2.0
Tamb(°C)
3
IT(RMS)(A)
50
VTM(V)
Tj=Tj max
2.5
4
3.0
75
5
3.5
6
4.0
100
4.5
7
125
5.0
8
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
10
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
1E+0
Fig. 5:
number of cycles.
90
80
70
60
50
40
30
20
10
1E-1
1E-2
1E-3
9
8
7
6
5
4
3
2
1
0
0
1
0
IT(RMS) (A)
ITSM (A)
1E-3
K=[Zth/Rth]
Repetitive
Tc=100°C
Zth(j-c)
1E-2
Surge peak on-state current versus
25
10
1E-1
Number of cycles
BTA/BTB08 and T8 Series
Non repetitive
Tj initial=25°C
50
Tc(°C)
tp(s)
DPAK/IP AK
1E+0
Zth(j-a)
TO-220AB/D PAK
75
100
Zth(j-a)
1E+1
100
BTA
t=20ms
One cycle
1E+2 5E+2
BTB/T8
1000
5/10
125