MCR22-8 ON Semiconductor, MCR22-8 Datasheet - Page 2

no-image

MCR22-8

Manufacturer Part Number
MCR22-8
Description
(MCR22-6 / -8) SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCR22-8
Manufacturer:
ON
Quantity:
12 000
Part Number:
MCR22-8
Manufacturer:
MOT/ON
Quantity:
1 000
Part Number:
MCR22-8
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MCR22-8RL1G
Manufacturer:
ON Semiconductor
Quantity:
10 350
(1) Pulse Width = 1.0 ms, Duty Cycle
(2) R GK Current not included in measurement.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Lead Solder Temperature
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On–State Voltage (1)
Gate Trigger Current (Continuous dc) (2)
Gate Trigger Voltage (Continuous dc) (2)
Gate Non–Trigger Voltage (1)
Holding Current
Critical Rate of Rise of Off–State Voltage
(Lead Length
(V AK = Rated V DRM or V RRM ; R GK = 1000 Ohms)
(I TM = 1 A Peak)
(V AK = 6 Vdc, R L = 100 Ohms)
(V AK = 7 Vdc, R L = 100 Ohms)
(V AK = 12 Vdc, R L = 100 Ohms)
(V AK = 12 Vdc, Gate Open)
Initiating Current = 200 mA
(T C = 110 C)
q
1/16 from case, 10 s Max)
Characteristic
Characteristic
v
1%.
(T C = 25 C unless otherwise noted.)
MCR22–6, MCR22–8
http://onsemi.com
T C = 25 C
T C = 110 C
T C = 25 C
T C = –40 C
T C = 25 C
T C = –40 C
T C = 110 C
T C = 25 C
T C = –40 C
2
I DRM , I RRM
Symbol
dv/dt
V TM
V GT
V GD
I GT
I H
Symbol
R JC
R JA
T L
Min
0.1
+260
Max
160
Typ
1.2
2.0
50
30
25
Max
200
200
500
1.7
0.8
1.2
5.0
10
10
Unit
C/W
C/W
C
Volts
Volts
Volts
V/ s
Unit
mA
A
A
A

Related parts for MCR22-8