T2035-600G STMicroelectronics, T2035-600G Datasheet - Page 3

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T2035-600G

Manufacturer Part Number
T2035-600G
Description
HIGH PERFORMANCE TRIAC
Manufacturer
STMicroelectronics
Datasheet

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Fig. 1: Maximum power dissipation versus RMS
on-state current.
Fig. 3: RMS on-state current versus case tem-
perature.
Fig. 5: Relative variation of gate trigger currentand
holding current versus junction temperature (typi-
cal values).
P(W)
25
20
15
10
I
22
20
18
16
14
12
10
I ,I [Tj]/I ,I [Tj=25 C]
2.5
2.0
1.5
1.0
0.5
0.0
T(RMS)
GT H
5
0
8
6
4
2
0
-40
0
0
(A)
=30
I
-20
H
I
GT H
GT
25
0
5
=180
=60
20
50
Tcase( C)
I
T(RMS)
40
Tj( C)
10
=90
(A)
60
75
80
=120
15
100
100
=180
120
125
140
20
Fig. 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(T
heatsink+contact.
Fig. 4: Relative variation of thermal impedance
versus pulse duration.
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
P(W)
25
20
15
10
I
200
180
160
140
120
100
K=[Zth/Rth]
1.00
0.10
0.01
TSM
5
0
80
60
40
20
amb
0
0
1E-3
(A)
Rth=4 C/W
1
and T
20
=180
1E-2
case
40
Rth=2 C/W
) for different thermal resistances
Zth(j-c)
10
1E-1
Number of cycles
60
Tamb( C)
Rth=1 C/W
tp(s)
1E+0
80
Rth=0 C/W
100
100
1E+1
T2035-600G
Zth(j-a)
Tcase ( C)
120
Tj initial=25 C
F=50Hz
1E+2 5E+2
140
1000
100
105
110
115
120
125
3/5

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