BSM20GD60DL Eupec Power Semiconductors, BSM20GD60DL Datasheet - Page 6

• Manufacturer Part Number: BSM20GD60DL
• Description: IGBT, IGBT Power Module, VCG 600, VCE 600, IC 25 A
• Manufacturer: Eupec Power Semiconductors

I
Cpuls
BSM 20 GD 60 DL
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Cpuls
parameter: V
V
GE
GE
/I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
10
100
C puls
)
GE
)
,
20
= 15 V
T
200
= 20 A
j
= 150°C
30
300
100 V
40
400
50
500
60
600
70
Q
300 V
V
V
Gate
CE
800
90
6
I
Typ. capacitances
C = f (V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/I
C
= f(V
10
10
10
10
nF
10
-1
-2
6
4
2
0
1
0
CE
0
0
CE
di/dt = 200A/µs
° allowed numbers of
° time between short
short circuit: <1000
circuit: >1s
)
) , T
100
5
GE
GE
800A/µs
1400A/µs
j
= ± 15 V, t
= 150°C
200
= 0 V, f = 1 MHz
10
300
15
400
20
SC
500
25
10 µs, L < 50 nH
600
30
Oct-23-1997
V
V
V
V
Coss
CE
CE
Ciss
Crss
800
40