BSM20GD60DL Eupec Power Semiconductors, BSM20GD60DL Datasheet - Page 4

• Manufacturer Part Number: BSM20GD60DL
• Description: IGBT, IGBT Power Module, VCG 600, VCE 600, IC 25 A
• Manufacturer: Eupec Power Semiconductors

BSM 20 GD 60 DL
Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
C
tot
I
tot
C
= (T
= (T
90
70
60
50
40
30
20
10
26
22
20
18
16
14
12
10
W
A
0
8
6
4
2
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
120
120
T
T
°C
°C
C
C
160
160
4
Safe operating area
I
parameter: D = 0, T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= (V
K/W
10
10
10
10
10
10
10
10
10
= (t
A
-1
-1
-2
-3
2
1
0
1
0
CE
10
10
0
-5
)
p
)
single pulse
10
p
-4
10
/ T
C
1
= 25°C , T
10
-3
10
2
10
j
-2
DC
IGBT
150 °C
t
p = 14.0µs
V
Oct-23-1997
100 µs
1 ms
10 ms
D = 0.50
10
10
V
t
-1
3
p
0.20
0.10
0.05
0.02
0.01
CE
s
10
0