T35L6432A-5T Taiwan Memory Technology, Inc., T35L6432A-5T Datasheet - Page 4

• Manufacturer Part Number: T35L6432A-5T
• Description: 64K x 32 SRAM
• Manufacturer: Taiwan Memory Technology, Inc.

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PIN DESCRIPTIONS
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
19,22-25,28,29,52,
53,56-59,62,63,68,
42,43,50,51,66,80
2,3,6-9,12,13, 18,
1,14,16,30,38,39,
69,72-75,78,79,
4,11,20,27,54,
5,10,21,26,55,
15,41,65,91
17,40,67,90
QFP PINS
61,70,77
60,71,76
31
64
CH
TE
MODE
VCCQ I/O Supply Output Buffer Supply: 3.3V +10%/-5%
VSSQ I/O Ground Output Buffer Ground: GND
SYM.
DQ32
DQ1-
VCC
VSS
NC
ZZ
(continued)
Ground
Output
Supply
TYPE
Input-
Input/
Static
Input
-
Data Inputs/Outputs: First Byte is DQ1-DQ8. Second Byte is
DQ9-DQ16. Third Byte is DQ17-DQ24. Fourth Byte is DQ25-
DQ32. Input data must meet setup and hold times around the
rising edge of CLK.
Power Supply: 3.3V +10%/-5%
Ground: GND
No Connect: These signals are not internally conntected.
Mode: This input selects the burst sequence. A LOW on this pin
selects LINEAR BURST. A NC or HIGH on this pin selects
INTERLEAVED BURST. Do not alter input state while device is
operating.
Snooze Enable: This active HIGH asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory arry is retained.
P. 4
DESCRIPTION
Publication Date: DEC. 1998
T35L6432A
Revision:A