MMBT5551L-X-AE3-R Unisonic Technologies, MMBT5551L-X-AE3-R Datasheet - Page 2

• Manufacturer Part Number: MMBT5551L-X-AE3-R
• Description: Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

MMBT5551
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Note: Pulse test: PW<300μs, Duty Cycle<2%
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
DC Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
ABSOLUATE MAXIUM RATINGS
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
CLASSIFICATION OF h
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
FE
SYMBOL
V
V
80-170
V
V
V
CE(SAT)
BE(SAT)
I
I
h
C
NF
CBO
EBO
CBO
CEO
EBO
f
A
FE
T
ob
(Ta = 25℃)
I
I
I
V
V
V
V
V
I
I
I
I
V
V
I
R
(Ta= 25℃, unless otherwise specified)
C
C
E
C
C
C
C
C
CB
BE
CE
CE
CE
CE
CB
=100μA, I
=1mA, I
=10μA, I
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=0.25mA, V
S
=1kΩ, f=10Hz ~ 15.7kHz
=4V, I
=120V, I
=5V, I
=5V, I
=5V, I
=10V, I
=10V, I
TEST CONDITIONS
C
B
C
C
C
C
=0
B
B
B
B
C
E
=0
=0
=1mA
=10mA
=50mA
E
=1mA
=5mA
=1mA
=5mA
=0, f=1MHz
E
=0
=10mA, f=100MHz
=0
CE
SYMBOL
=5V
V
V
V
T
P
T
CBO
CEO
I
EBO
STG
C
D
J
150-240
B
NPN SILICON TRANSISTOR
-40 ~ +150
RATINGS
MIN
180
160
100
80
80
80
6
+150
180
160
600
350
6
TYP
160
200-400
MAX
C
0.15
400
300
0.2
6.0
50
50
QW-R206-010,E
1
1
8
2 of 4
UNIT
mW
mA
UNIT
°C
°C
MHz
V
V
V
nA
nA
dB
pF
V
V
V
V
V