MMBT5551L-X-AE3-R Unisonic Technologies, MMBT5551L-X-AE3-R Datasheet
MMBT5551L-X-AE3-R
Related parts for MMBT5551L-X-AE3-R
MMBT5551L-X-AE3-R Summary of contents
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... HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage High current gain ORDERING INFORMATION Ordering Number Normal Lead Free Plating MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R MARKING www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd =160V CEO Halogen-Free NPN SILICON TRANSISTOR Lead-free: MMBT5551L Halogen-free: MMBT5551G ...
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... Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Note: Pulse test: PW<300μs, Duty Cycle<2% CLASSIFICATION OF h RANK RANGE UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw (Ta = 25℃) SYMBOL V CBO V CEO V EBO I C ...
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... MMBT5551 ■ TYPICAL CHARACTERICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN SILICON TRANSISTOR QW-R206-010,E ...
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... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN SILICON TRANSISTOR ...