TYN0512 STMicroelectronics, TYN0512 Datasheet - Page 2

• Manufacturer Part Number: TYN0512
• Description: HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY
• Manufacturer: STMicroelectronics

GATE CHARACTERISTICS (maximum values)
P G (AV) = 1W
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/TYN 0512 ---> TXN/TYN 1012
2/5
Rth (j-c) DC Junction to case for DC
Symbol
Symbol
Rth (j-a)
I DRM
I RRM
dV/dt
V GT
V GD
V TM
I GT
tgt
I H
I L
tq
V D =12V
V D =12V
V D =V DRM R L =3.3k
V D =V DRM I G = 40mA
dI G /dt = 0.5A/ s
I G = 1.2 I GT
I T = 100mA
ITM= 24A tp= 380 s
V DRM Rated
V RRM Rated
Linear slope up to V D =67%V DRM
gate open
V D =67%V DRM
dI TM /dt=30 A/ s
Junction to ambient
P GM = 10W (tp = 20 s)
(DC) R L =33
(DC) R L =33
gate open
I TM = 24A
dV D /dt= 50V/ s
Test Conditions
Parameter
I FGM = 4A (tp = 20 s)
V R = 25V
Tj= 125 C
Tj= 125 C
Tj= 125 C
Tj= 125 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
V RGM = 5 V.
TXN
TYN
MAX
MAX
MAX
MAX
MAX
TYP
TYP
TYP
MIN
MIN
Value
Value
0.01
200
1.5
0.2
1.6
3.5
2.5
15
50
30
70
60
2
3
V/ s
Unit
Unit
mA
mA
mA
mA
C/W
C/W
V
V
V
s
s