SS8P4C Vishay Siliconix, SS8P4C Datasheet - Page 3

• Manufacturer Part Number: SS8P4C
• Description: (SS8P3C / SS8P4C) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
• Manufacturer: Vishay Siliconix

www.DataSheet.co.kr
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 89029
Revision: 10-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
A
= 25 C unless otherwise noted)
Fig. 2 - Forward Power Loss Characteristics Per Diode
0.01
100
2.4
2.0
1.6
1.2
0.8
0.4
0.1
10
10
Fig. 1 - Maximum Forward Current Derating Curve
8
6
4
2
0
0
1
0
0
0
T
T
at the Cathode Band Terminal
A
L
0.1
25
= 125 °C
measured
Instantaneous Forward Voltage (V)
D = 0.1
1
T
Average Forward Current (A)
0.2
A
50
= 150 °C
Lead Temperature (°C)
D = 0.2
0.3
2
75
[e-mail], [e-mail],
D = 0.3
For technical questions within your region, please contact one of the following:
Resistive or Inductive Load
0.4
T
A
100
= 25 °C
3
0.5
D = 0.5
D = t
125
p
0.6
/T
4
D = 0.8
150
This document is subject to change without notice.
T
D = 1.0
0.7
t
p
175
0.8
5
New Product
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
0.001
1000
1000
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0.01
100
100
100
0.1
10
10
10
1
1
0.01
0.1
Fig. 5 - Typical Junction Capacitance Per Diode
10
[e-mail]
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
T
20
A
= 150 °C
30
0.1
T
t - Pulse Duration (s)
Reverse Voltage (V)
A
T
40
1
A
= 125 °C
= 25 °C
SS8P3C, SS8P4C
50
1
60
Junction to Ambient
www.vishay.com/doc?91000
10
70
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
80
90
www.vishay.com
100
100
100
3
Datasheet pdf - http://www.DataSheet4U.net/