1N4148-K SEMTECH ELECTRONICS LTD., 1N4148-K Datasheet - Page 2

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1N4148-K

Manufacturer Part Number
1N4148-K
Description
Silicon Epitaxial Planar Diode
Manufacturer
SEMTECH ELECTRONICS LTD.
Datasheet
1N4148-K
Characteristics at T
Forward Voltage
Leakage Current
Reverse Breakdown Voltage
Capacitance
Voltage Rise when Switching ON
Reverse Recovery Time
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
1)
at I
at V
at V
at V
at I
at I
at V
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
from I
at f = 100 MHz, V
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
F
R
R
R
R
R
F
= 10 mA
= 100 µA
= 5 µA
= V
= 20 V
= 75 V
= 20 V, T
F
= 10 mA to I
R
®
= 0
j
= 150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
RF
j
= 25
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
= 2 V
Rectification Efficiency Measurement Circuit
~ ~ ~
= 1 mA, V
O
C
Parameter
O
C
R
= 6 V, R
L
= 100 Ω
Symbol
V
V
R
C
(BR)R
(BR)R
V
V
η
I
I
I
t
R
R
R
rr
thA
tot
V
F
fr
Min.
0.45
100
75
-
-
-
-
-
-
-
-
0.35
Max.
Dated : 01/08/2008
200
2.5
50
1
5
4
4
-
-
-
1)
K/mW
Unit
nA
µA
µA
pF
ns
V
V
V
V
-

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