1N4148-K SEMTECH ELECTRONICS LTD., 1N4148-K Datasheet
1N4148-K
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1N4148-K Summary of contents
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... SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4148. Absolute Maximum Ratings (T Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Power Dissipation Junction Temperature ...
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... Characteristics Parameter Forward Voltage Leakage Current 150 Reverse Breakdown Voltage 100 µ µA R Capacitance Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < ...
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... Forward characteristics Tj=100 Admissible power dissipation versus ambient temperature Valid provided that leads at a distance from case are kept at ambient temperature mW 1000 900 800 700 P tot 600 500 400 300 200 ...
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... Leakage current versus junction temperature Admissible repetitive peak forward current versus pulse duration Valid provided that leads at a distance from case A are kept at ambient temperature 100 v=0 I FRM ...