SMBYT01 STMicroelectronics, SMBYT01 Datasheet - Page 3

• Manufacturer Part Number: SMBYT01
• Description: Fast Recovery Rectifier Diodes
• Manufacturer: STMicroelectronics

Fig. 1: Low frequency power losses versus
average current.
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 3: Non repetitive surge peak forward current
versus overload duration.
12
10
Fig. 5: Voltage drop versus forward current.
(Maximum values)
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
0.001
8
6
4
2
0
0.01
0.0
I M(A)
P F(av)(W)
V FM(V)
Tl=100 C
0.2
o
0.01
=0.05
0.1
0.4
I F(av)(A)
t(s)
=0.1
0.1
0.6
I FM(A)
1
=0.2
0.8
IM
1
=tp/T
=0.5
1.0
Tc=110 C
Tc=25 C
Tc=75 C
T
t
=0.5
10
=1
o
o
tp
o
1.2
10
20
Fig. 2: Peak current versus form factor.
35
30
25
20
15
10
Fig. 4: Relative variation of thermal impedance
junction to lead versus pulse duration.
0.01
Fig.
temperature. (duty cycle : 0.5)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0.001
0
1
I M(A)
I
K
F(av)(A)
K =
= 0 . 1
=0.5
6:
= 0 . 2
Single pulse
=tp/T
20
P=0.5W
Zth(j-c) (tp. )
P=1.5W
Rth(j-c)
Average
T
40
0.01
P=2.5W
tp
60
Rth(j-a)=75
current
= 0 . 5
Tamb( C)
1cm Cu
80
0.1
tp(s)
2
o
o
100
C/W
Rth(j-a)=Rth(j-l)
versus
120
=tp/T
1
SMBYT01
=tp/T
T
140
tp
ambient
T
I
M
tp
160
1.0
3/5
10