GP201MHS18 Dynex Semiconductor, GP201MHS18 Datasheet - Page 7

• Manufacturer Part Number: GP201MHS18
• Description: Low VCE(SAT) Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1000
100
350
300
250
200
150
100
10
50
1
0
1
1
Fig. 13 3 Phase inverter operating frequency
Conditions:
T
R
I
C
Fig. 11 Forward bias safe operating area
j
g
= 125˚C, T
max. (single pulse)
= 4.7 , V
Collector-emitter voltage, V
10
case
CC
= 900V
= 75˚C
f
max
100
- (kHz)
PWM Sine Wave
Power Factor = 0.9,
Modulation Index =1
ce
1000
- (V)
10
10000
20
1000
350
300
250
200
150
100
100
50
10
0
0.001
1
0
Fig. 14 DC current rating vs case temperature
Fig. 12 Transient thermal impedance
20
0.01
40
Case temperature, T
Pulse width, t
60
80
0.1
p
100
case
- (s)
GP201MHS18
- (˚C)
120
1
Transistor
140
Diode
160
7/10
10